Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
Dordrecht: Springer Netherlands, Imprint: Springer, 2016
Online
Sammelwerk, Elektronische Ressource
- 1 Online-Ressource (XVIII, 347 p. 254 illus., 150 illus. in color)
Ermittle Ausleihstatus...
Titel: |
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
|
---|---|
Verantwortlichkeitsangabe: | edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
Autor/in / Beteiligte Person: | Park, Byung-Eun ; Ishiwara, Hiroshi ; Okuyama, Masanori ; Sakai, Shigeki ; Yoon, Sung-Min |
Lokaler Link: | |
Link: | |
Verwandtes Werk: | |
Veröffentlichung: | Dordrecht: Springer Netherlands, Imprint: Springer, 2016 |
Medientyp: | Sammelwerk |
Datenträgertyp: | Elektronische Ressource |
Umfang: | 1 Online-Ressource (XVIII, 347 p. 254 illus., 150 illus. in color) |
ISBN: | 9789402408416 |
DOI: | 10.1007/978-94-024-0841-6 |
Schlagwort: |
|
Sonstiges: |
|