Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
2nd ed. 2020. - Singapore: Springer Singapore, Imprint: Springer, 2020
Online
Sammelwerk, Elektronische Ressource
- 1 Online-Ressource (XIV, 425 p. 313 illus., 183 illus. in color)
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Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications
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Verantwortlichkeitsangabe: | edited by Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon |
Autor/in / Beteiligte Person: | Park, Byung-Eun ; Ishiwara, Hiroshi ; Okuyama, Masanori ; Sakai, Shigeki ; Yoon, Sung-Min |
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Ausgabe: | 2nd ed. 2020 |
Veröffentlichung: | Singapore: Springer Singapore, Imprint: Springer, 2020 |
Medientyp: | Sammelwerk |
Datenträgertyp: | Elektronische Ressource |
Umfang: | 1 Online-Ressource (XIV, 425 p. 313 illus., 183 illus. in color) |
ISBN: | 9789811512124 |
DOI: | 10.1007/978-981-15-1212-4 |
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